LETTER TO DR. PUTHOFF: STANFORD RESEARCH INSTITUTE

CIA-STARGATE

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The document consists of several pages from the CIA's Stargate program. The content includes information about photodetectors, silicon charged-particle detectors, operating temperature, and the nature and propagation of light. It discusses the effects of radiation damage on detectors, the relationship between operating temperature and detector performance, and the electromagnetic spectrum. It also includes a graph showing the relative eye sensitivity to different wavelengths of light.

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 0.8        1       1.2
 WAVELENGTH (MICRONS)
 ands `photodetectors.
 (After Melchior and Lynch, Ref. 39.)
 Fig. 25
 (a) Equivalent circuit and
 (b) noise equivalent circuit of a photodlode, where R Is the series resistance and C Is the
 junction capacitance.
 (After DiDomenico and Svelto, Ref. 35.)
 CPYRGHT
 4 Photodetectors
 available power for the photo
 Pav = I II PD\(0) I
 It is interesting to compare F
 For a typical photodiode with
 a photoconductor with the sar
 available power from the phot
 from the photoconductor.
 The signal-to-noise perforn
 equivalent noise circuit shown
 noise source due to the serie,,
 source. The signal-to-noise ray
 Comparing Eq. (44) with Eq.
 at high-level detection where
 SNR is comparable; at low-leN
 however, the SNR of the pho
 B. The p-f-n Photodiode
 depletion-layer photodetector.
 (the intrinsic layer) can be tai
 frequency response. A typical
 Fig. 26(a). Absorption of ligh
 pairs. Pairs produced in the de
 will eventually be separated by
 external circuit as carriers drif
 Under steady-state conditioi
 biased depletion layer is given
 where Jd, is the drift current
 region and Jd)ff is the diffusior
 side the depletion layer in the 1
 reverse-biased junction. We
 assumptions that the thermal g
 surface n layer is much thinn,
 electron generation rate is givt
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 all
 CPYRGHT
 SILICON CHARGED-PARTICLE DETECTORS
 characteristics. The detector changes include in-
 creased noise and changes in voltage drop across the
 load resistor, which require adjustments to the applied
 bias voltage, which in turn change the electric-field
 strength. Thus carrier trapping and increased detector
 noise are degrading to energy resolution.
 Resolution degradation appears as a broadening of the
 response for a monoenergetic source. With increasing
 doses of neutrons, charged particles, or fission frag-
 ments, the low-energy side of the response peak may
 begin to show a definite secondary peak. Continued
 irradiation results in further broadening, until, in ex-
 treme cases, the multiple peaks may merge com-
 pletely. Electron bombardment tends to increase leak-
 age current, resulting in excess detector noise, which
 broadens response peaks. Some of these damage ef-
 fects may undergo a degree of annealing, but there is
 always a significant residual deterioration after a suffi-
 cient dose has been accumulated.
 Partially depleted detectors are more susceptible than
 are fully depleted devices to deterioration from radia-
 tion damage. Radiation damage for different types of
 detectors are compared in Table 2, which gives the
 dose for various particles to significantly deteriorate
 the detectors.
 OPERATING TEMPERATURE
 As a rule of thumb, increasing the operating tempera-
 ture of a charged-particle detector causes the leakage
 current to incur lase b a factor of 3 for each 100C rise.
 su_   (tinsi in a noise-widt increase QL3,{ pr   ate ,1.J
 ke~L    [j e. The upper temperature limit is deter-
 mined by the maximum acceptable noise or by the
 ultimate breakdown of the detector (usually between
 45 and 55?C). The effects of high-temperature break-
 down are permanent and are not covered by the war-
 ranty terms. An additional effect is the shift in detector
 bias caused by the higher leakage current. This leak-
 age current increases the voltage drop across the se-
 ries bias resistor, thus lowering the bias voltage across
 the detector. When high-temperature operation is
 necessary, a constant sensitive depth is maintained
 over the entire operating temperature range only if a
 totally depleted detector is used with sufficient
 overbias to compensate for the drop across the series
 bias resistor, which should be as small as possible
 (usually 1 to 3 M&2 is adequate).
 Decreasing the operating temperature of the detector
 reduces junction noise and leakage current. However,
 the capacitance of the device is a constant limiting
 parameter of the system noise. Another limitation to
 successful operation at low temperatures is the expan-
 sion coefficient of the detector's component parts. The
 expansion coefficient is similar for silicon and for lavite,
 the ring in which the silicon wafer is mounted, but is
 quite different for the bonding epoxy. Therefore at very
 low temperatures the epoxy may crack, causing exces-
 sive noise or loss of contact. The probability of low-
 temperature damage increases with detector size. For
 cooled operation, detectors fabricated with cryogenic
 epoxy may be special ordered from ORTEC.
 Another effect of decreasing the operating tempera-
 ture of a silicon detector is an increase of the average
 energy necessary to create an electron-hole pair, e.
 Due to a widening of the bandgap of silicon in the
 temperature range from 300 K to 80 K, e increases,
 from 3.62 eV to 3.72 eV. A result of this increase is an
 apparent shift in energy of a measured spectroscopic
 line. For instance, Fig. 8 shows the apparent peak shift
 of the 5.477-MeV 241Am alpha particle peak in the 4.2-
 K to 320-K temperature range measured with silicon
 charged-particle detectors.
 SHOCK AND VIBRATION
 Many ORTEC surface-barrier detectors have been
 subjected to the shock and vibration tests required for
 Table 2. Comparison of Radiation Damage in Silicon and Germanium Particle Detectors
 Surface barrier
 Diffusion junction
 Si(Li)
 Ge(Li)
 1013
 1013
 1012
 A
 Pa
 lpha
 rticles
 Fi
 Fra
 ssion
 gments
 1012
 1010
 109
 108
 10'2
 1010
 101,
 108
 1011                                                               10
 8-109
 108-109
 Ohl
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 S -         Chap. 39
 -inp 'urged. (a) Show that the
 olial volume. (b) Show that
 ated by integrating the Poynting
 0 equal to the rate at which the
 energy density for all points within
 -he Poynting vector point of view,
 gh the wires but through the space
 we must first find B, which is the
 _ing the charging process; see Fig.
 CPYRGHT
 Nature and Propagation of Light
 CHAPTER 40
 40-1  Light and the Electromagnetic Spectrum
 Light was shown by Maxwell to be a component of the electromagnetic
 spectrum of Fig. 40-1. All these waves are electromagnetic in nature and
 have the same speed c in free space. They differ in wavelength (and thus
 in frequency) only, which means that the sources that give rise to them and
 the instruments used to make measurements with them are rather different.*
 The electromagnetic spectrum has no definite upper or lower limit. The
 labeled regions in Fig. 40-1 represent frequency intervals within which a
 common body of experimental technique, such as common sources and com-
 mon detectors, exists. All such regions overlap. For example, we can pro-
 duce radiation of wavelength 10-3 meter either by microwave techniques
 (microwave oscillators) or by infrared techniques (incandescent sources).
 I V
 Frequency, cycles/sec
 102    104    106    106           1010   1016   101            10u     1018         10'0   10 6
 Power                               Mkrwwaws _             bis   --    X-nws
 Radio _             Ultravio et     _          mma rays
 1    I I     1 I    I I    I 1    1    I    I     I      I    1    I I    I    1    I    I
 10-14
 106    i04                    10a 1 10'2 10-4     10-e        10-e    10-10   10 12
 Wavelength, meters
 pig. 40-1 The electromagnetic spectrum.  Note that the wavelength and frequency
 scales are logarithmic.
 * For a report of electromagnetic waves with wavelengths as long as 1.9 X 107 miles
 the student should consult an article by James Heirtaler in the Scientific American for
 March 1962.
 A p p roj e1ease
 994                   NATURE AND PROPAGATION OF LIGHT          Chap. 4(
 Wavelength, m?
 Fie. 40-2  The relative eye sensitivity of an assumed standard observer at different wave-
 lengths for normal levels of illumination. The shaded areas represent the (continuously
 graded) color sensations for normal vision.
 "Light" is defined here as radiation that can affect the eye. Figure 40-2,
 which shows the relative eye sensitivity of an assumed standard observer to
 radiations of various wavelengths, shows that the center of the visible region
 is about 5.55 X 10_7 meter. Light of this wavelength produces the sensa-
 tion of yellow-green. *
 In optics we often use the micron (abbr. u) the millimicron (abbr. m?),
 and the Angstrom (abbr. A) as units of wavelength. They are defined from
 1 ? = 10-8 meter
 1 m? = 10--9 meter
 1 A = 10-10 meter.
 Thus the center of the visible region can be expressed as 0.555 z, 555 m?, or
 55,50 A.                                       ...........,.~...~,~,~
 The Iiiiiits of the visible spectrum are not well defined because the eye
 sensitivity curve approaches the axis asymptotically at both long and short
 wavelengths.  If the limits are taken, arbitrarily, as the wavelengths at
 which the eye sensitivity has dropped to 10/, of its mA.x;m?m val?o +I,---
 The eye can detect   is ion beyond these limits if it is intense enoughIn
 many experiments in physics one can use photographic plates or light-sensi-
 tive electronic detectors in place of the human eye.
 *Bee "Experiments in Color Vision" by Edwin H. Land, Scientific American, May
 1959, and especially "Color and Perception: the Work of Edwin Land in the Light of
 Current Concepts" by M. H. Wilson and R. W. Brocklebank, Contemporary Physics,
 December 1961, for a fascinating discussion of the problems of perception and the distinc-
 tion between color as a characteristic of light and color as a perceived property of objects.